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BN films deposited from a BF,-NH, precursor, under chemical vapour infiltration conditiom, on plane sintered aSiC substrates were analysed by XPS. The films are non-stoichiometric with an N/B atomic ratio of < 1. They also contain significant amounts of oxygen atoms, homogeneously distributed in the film and thought to replace jtartly the nitrogen atoms in the turbostratic hexagonal network. As a result, ternary BN,O, species are formed locally. Near the BN/SiC interface, the oxygen concentration increases owing to the occurrence of ternary SiN,O, species, thought to be the result of an oxinitriding reaction of the substrate surface with the gas phase containing residual oxygen, at the very beginning of the BN deposition process.