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Molecular-beam epitaxy growth and nitrogen doping of hexagonal ZnSe and ZnCdSe/ZnSe quantum well structures on hexagonal ZnMgSSe bulk substrates

SiOxNy layers in the thickness range from 4 to 20 nm are grown by rapid thermal processing (RTP) using NH3 and N2O as nitridants. I–V measurements, investigation of the time‐dependent breakdown, and post‐stress C–V display significant distinctions between the layers according to their growth conditions. For the explanation of the electrical behaviour, the compositional structure was examined by means of AES, SIMS, and NRA.

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