Expérience GANILInternational audienceThis paper presents experimental data showing heavy ions inducing gate degradation in power MOSFETs. In the experiments, backside and front-side irradiations are performed. During backside irradiation, the heavy ion ranges are tuned in such way to control whether they hit the gate or not. Gate-to-source current Igss ( ) is measured versus heavy ions (H.I.) fluence . Post-irradiation- gate-stress-test (PGST) allows measurement of gate breakdown voltage VBD( ) which is observed to decrease with (H.I.) fluence. Based on these experimental results, a hypothesis of substrate- generated carriers impact overlap of multiple strikes may explain gate degradation until SEGR triggering. This last hypothesis is supported by a statistical model approach of heavy ions multiple impacts

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Proton irradiations were performed on three types of optocouplers at three energies 60 MeV, 100 MeV and 200 MeV, followed by a TID irradiation up to 75 kRAD. GEANT4 allowed the calculation of the fluences needed to induce the same NIEL. As a preliminary result, diode's degradations can be predicted and only depend on the initial minority carrier lifetime τ τ τ τ rr0 and not the technology.