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The reliability of electrical equipment in high voltage systems can be affected by certain defaults (metallic particles, roughness, etc.) inside the device enclosure. These anomalies may cause a local glow discharge which propagates progressively inside the insulator and which can lead to electrical breakdown. To avoid this end result, corona discharges have to be detected with a system which satisfies some requirements. Actual methods are not well adapted to industrial constraints. An optoelectronic setup, consisting of a fluorescent plastic optical fiber as a light sensor, connected to a simple, low-cost amplifier, is proposed. Measurements were first carried out in air to demonstrate the feasibility of this detection method, then air was replaced by SF6. Results lead to the delineation of a sensor made of the fluorescent fiber and the associated amplifier.

Expérience GANILInternational audienceThis paper presents experimental data showing heavy ions inducing gate degradation in power MOSFETs. In the experiments, backside and front-side irradiations are performed. During backside irradiation, the heavy ion ranges are tuned in such way to control whether they hit the gate or not. Gate-to-source current Igss ( ) is measured versus heavy ions (H.I.) fluence . Post-irradiation- gate-stress-test (PGST) allows measurement of gate breakdown voltage VBD( ) which is observed to decrease with (H.I.) fluence. Based on these experimental results, a hypothesis of substrate- generated carriers impact overlap of multiple strikes may explain gate degradation until SEGR triggering. This last hypothesis is supported by a statistical model approach of heavy ions multiple impacts

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