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The electromigration performance of the Al-1 per cent SifTiN/Ti metal scheme is investigated both for contacts and for stripes and compared with the results for the standard Al-1 per cent Si metallization. Statistical extrapolations at the operating conditions for a device have been performed to calculate the useful life of contacts and stripes. The results indicate that the most severe limitation to the interconnection reliability is given by the contacts without the diffusion barrier layer.

This paper reports the results obtained, using production machines, by a test program started in the first quarter of 1989.

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