Different type of mechanisms of gas sensing, various factors that affect the mechanisms, ways to improve the gas sensitivity, state of the art of fabrication techniques and materials used are reviewed. The work also discusses a novel type of gas sensor derived based on the reviewed mechanisms and materials. The development of semiconductor-based gas sensors using tin oxide which is simple to implement, low cost and offering good stability and sensitivity is discussed.

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The proposed work studies the synthesis, structural, and sensitivity of tin oxide films deposited by sputtering for a gas sensor. This includes an analysis of a tin oxide film doped with noble metal palladium. Gas sensitivity of the deposited layer is analysed as per the deposition parameters such as the thickness of the film, substrate temperature, argonÀoxygen ratio of the sputtering environment, and duration and doping metal weight percentage into the tin oxide films and the results obtained are explained.