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An all-optical reconfigurable neuron based on a photoelectret-electro-optic medium with a sandwich-type structure is presented. Both the inputs and the output of the neuron and the reconfiguration of the weights of the inputs are optical. The structure presented is very versatile and exhibits low energy consumption, as the numerical estimates indicate. The number of inputs can be varied (to an upper limit that is determined by the diffraction effect) without changing the structure of the optical neuron; the same is true for the neurons' weights.

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In this paper we present a new kind of photodetector, based on optical rectification in MOS transistors. The main characteristic of this type of photodetector is that it does not absorb the incident radiation. We deduce its lux-amperic characteristics and estimate the magnitude of its responsivity. The same principles can be applied to HEMT transistors.