High-throughput computational and experimental techniques have been used in the past to accelerate the discovery of new promising solar cell materials. An important part of the development of novel thin film solar cell technologies, that is still considered a bottleneck for both theory and experiment, is the search for alternative interfacial contact (buffer) layers. The research and development of contact materials is difficult due to the inherent complexity that arises from its interactions at the interface with the absorber. A promising alternative to the commonly used CdS buffer layer in thin film solar cells that contain absorbers with lower electron affinity can be found in β-In2S3. However, the synthesis conditions for the sputter deposition of this material are not well-established. Here, In2S3 is investigated as a solar cell contact material utilizing a high-throughput combinatorial screening of the temperature-flux parameter space, followed by a number of spatially resolved characterization techniques. It is demonstrated that, by tuning the sulfur partial pressure, phase pure β-In2S3 could be deposited using a broad range of substrate temperatures between 500 °C and ambient temperature. Combinatorial photovoltaic device libraries with Al/ZnO/In2S3/Cu2ZnSnS4/Mo/SiO2 structure were built at optimal processing conditions to investigate the feasibility of the sputtered In2S3 buffer layers and of an accelerated optimization of the device structure. The performance of the resulting In2S3/Cu2ZnSnS4 photovoltaic devices is on par with CdS/Cu2ZnSnS4 reference solar cells with similar values for short circuit currents and open circuit voltages, despite the overall quite low efficiency of the devices (∼2%). Overall, these results demonstrate how a high-throughput experimental approach can be used to accelerate the development of contact materials and facilitate the optimization of thin film solar cell devices.

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We report the capacitance of entangled carbon nanotubes (CNTs) synthesized on flexible carbon fabric via water-assisted chemical vapor deposition. The CNTs were grown at atmospheric pressure with iron (Fe) as the catalyst, ethylene (C2H4) and 5%/95% H2/Ar as precursor gasses, and aluminum oxide as a buffer/barrier layer. The effect of the catalyst thickness (5 and 10 nm) on the specific capacitance was studied. The capacitance behavior of CNTs was evaluated by cyclic voltammetry measurements via a three-electrode system. The highest specific capacitance, approximately 56 F/g, was obtained for electrodes with 5nm Fe thickness. A nearly rectangular shaped cyclic voltammogram was exhibited for the CNTs grown on the carbon fabric. A specific power density of 0.012 KW/Kg and specific energy density 0.15 Wh/Kg were calculated from the galvanic charge/discharge (CD) curves. In addition, electrochemical impedance spectroscopy (EIS) revealed a characteristic supercapacitive behavior with a low equivalent series resistance of 7 Ωcm2.

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