The bistertbutylimido complexes [MoCl(μ‐Cl)(NBu1)2(NH2Bu1)]2, 1, and MoCl2(NBu1)2(py)2, 2 (py = pyridine), were prepared by reacting MoCl2(NBu1)2(dme) (dme = dimethoxyethane) with excess Bu1NH2 and pyridine, respectively. Their structures were determined by X‐ray crystallography. 1 has a pseudo edge‐shared bioctahedral geometry with two Cl ligands bridging the Mo centers unequally. Pertinent bond distances and angles for 1, Mo = NBu1beut = 1.737(3) Å, ∠Mo = N‐CMe3 = 154.0(2)°; Mo = NBu1linear = 1.725(3) Å, ∠Mo = N‐CMe3 = 172.4(2)°; Mo‐Bu1NH2 = 2.233(2) Å; Mo‐Clbridging = 2.575(1) and 2.835(1) Å, and Mo‐Clterminal = 2.428(1) Å. Crystal data for 1: triclinic, space group P1, a = 8.897(4) Å, b = 10.518(3) Å, c = 10.663(3) Å, α = 107.68(2)° β = 98.03(3)° γ = 99.26(3)°, V = 919.3(5) Å3, Z = 1, Dc = 1.381 g/mL. 2 is mononuclear with a distorted octahedral geometry with two trans Cl ligands, two cis‐oriented Bu1N = ligands, and two py ligands trans to the imido groups. Pertinent averaged bond distances and angles for 2, Mo = NButbent = 1.736(4) Å, ∠Mo = N‐CMe3 = 163.8(4)°; Mo = NButlinear.= 1.705(5) Å, ∠Mo = N‐CMe3 = 173.4(4)° Mo‐N(py) = 2.44(1), Mo‐Cl = 2.421(3) Å. Crystal data for 2: orthorhombic, space group Pna21 a = 16.860(2) Å, b = 8.920(3) Å, c = 15.120(3) Å, V = 2274.1(9) Å3, Z = 4, Dc = 1.362 g/mL. A potential application of 2 as a single‐source precursor to grow molybdenum nitride and molybdenum carbonitride thin films by low pressure chemical vapor deposition (LPCVD) was explored. Cubic phase thin films (athin film = 4.16–4.20 Å) were grown at temperatures between 450 °C and 650 °C with hydrogen as carrier gas. At 450 °C, thin films of molybdenum nitride were obtained. With temperature of deposition increased from 450 °C to 650 °C, the ratio C/Mo increased from 0.03 to 0.5 whereas me ratio N/Mo decreased from 0.7 to 0.3. Thus, thin films of molybdenum carbonitride were deposited at 650 °C.

The abnormal sub-threshold leakage current is observed at high temperature in amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors (a-IGZO TFTs). To confirm this phenomenon dependence of the defects of a-IGZO active layer, the paper proposes the devices with N2O plasma treatment at a-IGZO film. This phenomenon only appears in the as-fabricated device, but not in the device with N2O plasma treatment, which is experimentally verified. N2O plasma treatment at a-IGZO TFTs enhances the thin film bonding strength which could suppress the formation of temperature-dependent point defects. The point defects could be generated from oxygen atoms have left their original sites above 400K. The N2O plasma treatment devices have better stability performance than as-fabricated devices. The results suggested that the density of point states for a-IGZO TFTs with N2O plasma treatment is much lower than that as-fabricated. The N2O plasma repairs the point defect to suppress temperature-dependent sub-threshold leakage current.