An abnormal sub-threshold leakage current is observed at high temperature in amorphous indium-gallium-zinc-oxide thin film transistors (a-IGZO TFTs). This phenomenon occurs due to a reduced number of defects in the device's a-IGZO active layer after the device has undergone N2O plasma treatment. Experimental verification shows that the N2O plasma treatment enhances the thin film bonding strength, thereby suppressing the formation of temperature-dependent holes, which are generated above 400 K by oxygen atoms leaving their original sites. The N2O plasma treatment devices have better stability performance than as-fabricated devices. The results suggest that the density of defects for a-IGZO TFTs with N2O plasma treatment is much lower than that in as-fabricated devices. The N2O plasma treatment repairs the defects and suppresses temperature-dependent sub-threshold leakage current.
The abnormal sub-threshold leakage current is observed at high temperature in amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors (a-IGZO TFTs). To confirm this phenomenon dependence of the defects of a-IGZO active layer, the paper proposes the devices with N2O plasma treatment at a-IGZO film. This phenomenon only appears in the as-fabricated device, but not in the device with N2O plasma treatment, which is experimentally verified. N2O plasma treatment at a-IGZO TFTs enhances the thin film bonding strength which could suppress the formation of temperature-dependent point defects. The point defects could be generated from oxygen atoms have left their original sites above 400K. The N2O plasma treatment devices have better stability performance than as-fabricated devices. The results suggested that the density of point states for a-IGZO TFTs with N2O plasma treatment is much lower than that as-fabricated. The N2O plasma repairs the point defect to suppress temperature-dependent sub-threshold leakage current.
Abnormal sub-threshold leakage current is observed at high temperature in amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors (a-IGZO TFTs). To confirm this phenomenon's dependence on the defects of a-IGZO active layer, this paper examines a device fabricated with N 2 O plasma treatment at a-IGZO film. This phenomenon only appears in the as-fabricated device, but not in the device with N 2 O plasma treatment, which is experimentally verified. N 2 O plasma treatment of a-IGZO TFTs enhance the thin film bonding strength, which could suppress the formation of temperature-dependent point defects. The point defects could be generated from oxygen atoms leaving their original sites above 400K. The N 2 O plasma treatment devices have better stability performance than as-fabricated devices. The results suggested that the density of point states for a-IGZO TFTs with N 2 O plasma treatment is much lower than that as-fabricated.The N 2 O plasma repairs the point defect to suppress temperature-dependent sub-threshold leakage current.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.