N₂O Plasma Treatment Suppressed Temperature-Dependent Point Defects Formation with Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors

Abstract

Abnormal sub-threshold leakage current is observed at high temperature in amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors (a-IGZO TFTs). To confirm this phenomenon's dependence on the defects of a-IGZO active layer, this paper examines a device fabricated with N 2 O plasma treatment at a-IGZO film. This phenomenon only appears in the as-fabricated device, but not in the device with N 2 O plasma treatment, which is experimentally verified. N 2 O plasma treatment of a-IGZO TFTs enhance the thin film bonding strength, which could suppress the formation of temperature-dependent point defects. The point defects could be generated from oxygen atoms leaving their original sites above 400K. The N 2 O plasma treatment devices have better stability performance than as-fabricated devices. The results suggested that the density of point states for a-IGZO TFTs with N 2 O plasma treatment is much lower than that as-fabricated.The N 2 O plasma repairs the point defect to suppress temperature-dependent sub-threshold leakage current.