A study has been made of the interfaces of sintered Ag-(100) InP metalsemiconductor contacts. The experimental conditions associated with the fabrication of the contacts have been identical to those used in the manufacture of the silver cathodes that are utilised in indium phosphide microwave oscillators. The examination has been performed with a systematic Auger profiling of a number of junctions. The Auger profiles have been complemented by direct examination of the contact's interface with scanning electron and optical microscopy. Following the sintering procedure considerable cross-diffusion of the constituent elements forming the contact has been seen to occur. The resulting Auger profile is shown to be a consequence of the formation of a solid solution of indium in silver, recrystallisation occurring within the silver metal, and the development of a silver phosphide compound within the silver metal close to the interface.

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