Deposition of amorphous carbon nitride films using Ar/N2 supermagnetron sputter

Kinoshita, Haruhisa; Kubota, Masaya; Ohno, Genji

doi:10.1016/j.tsf.2009.11.051

Cited by 5 publications

(1 citation statement)

References 21 publications

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“…The intensities of the absorption bands at 2930 cm -1 (CH 3 , CH 2 , and CH bonds) decreased and those at 1100 to 1700 cm -1 (C = C, C = N, and C = N-H bonds) increased with an increase in LORF [15]. The intensities of the absorption bands at 3300 cm -1 (NH bonds) changed little with LORF, but the absorption band at 3200 -3700 cm -1 (OH bond) was observed at LORF of 50 W [16]. H 2 O molecules adsorbed on the plasma chamber wall were estimated to be taken into the films by the H 2 O sputtering at 200/50 W.…”

Section: Physical and Chemical Characteristics Of The Filmsmentioning

confidence: 94%

Pulsed Supermagnetron Plasma CVD of a-CNx:H Electron-Transport Films for Au/a-CNx:H/p-Si Photovoltaic Cells

Kinoshita¹,

Suzuki²

2011

JMP

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Hydrogenated amorphous carbon nitride (a-CN x :H) films were formed on p-Si wafers set on a lower electrode by pulsed supermagnetron plasma CVD using i-C 4 H 10 and N 2 gases. Lower electrode RF power (LORF) of 13.56 MHz (50-800 W) was modulated by a 2.5-kHz pulse at a duty ratio of 12.5%, and upper electrode RF power (UPRF) of 50-400 W was supplied continuously. The optical band gap decreased with an increase in LORF at each UPRF. The open circuit voltage of Au/a-CN x :H/p-Si photovoltaic cells (a-CN x :H film thickness: 25 nm) was about 200 mV for each cell, and the short circuit current density and energy conversion efficiency increased with LORF for each UPRF. The highest energy conversion efficiency of 0.81% was obtained at UPRF/LORF of 200/800 W.

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Section: Physical and Chemical Characteristics Of The Filmsmentioning

confidence: 94%

Pulsed Supermagnetron Plasma CVD of a-CNx:H Electron-Transport Films for Au/a-CNx:H/p-Si Photovoltaic Cells

Kinoshita¹,

Suzuki²

2011

JMP

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Deposition of amorphous carbon nitride thin films using pressure-gradient RF magnetron sputtering and their chemical bonding structures

Aono

Terauchi

Sato

et al. 2023

Applied Surface Science

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Deposition of amorphous carbon films using Ar and/or N2 magnetron sputter with ring permanent magnet

2012

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Deposition of amorphous carbon nitride films using Ar/N2 supermagnetron sputter

Cited by 5 publications

References 21 publications

Pulsed Supermagnetron Plasma CVD of a-CN<sub>x</sub>:H Electron-Transport Films for Au/a-CN<sub>x</sub>:H/p-Si Photovoltaic Cells

Pulsed Supermagnetron Plasma CVD of a-CN<sub>x</sub>:H Electron-Transport Films for Au/a-CN<sub>x</sub>:H/p-Si Photovoltaic Cells

Deposition of amorphous carbon nitride thin films using pressure-gradient RF magnetron sputtering and their chemical bonding structures

Deposition of amorphous carbon films using Ar and/or N2 magnetron sputter with ring permanent magnet

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Deposition of amorphous carbon nitride films using Ar/N2 supermagnetron sputter

Cited by 5 publications

References 21 publications

Pulsed Supermagnetron Plasma CVD of a-CN&lt;sub&gt;x&lt;/sub&gt;:H Electron-Transport Films for Au/a-CN&lt;sub&gt;x&lt;/sub&gt;:H/p-Si Photovoltaic Cells

Pulsed Supermagnetron Plasma CVD of a-CN&lt;sub&gt;x&lt;/sub&gt;:H Electron-Transport Films for Au/a-CN&lt;sub&gt;x&lt;/sub&gt;:H/p-Si Photovoltaic Cells

Deposition of amorphous carbon nitride thin films using pressure-gradient RF magnetron sputtering and their chemical bonding structures

Deposition of amorphous carbon films using Ar and/or N2 magnetron sputter with ring permanent magnet

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Pulsed Supermagnetron Plasma CVD of a-CN<sub>x</sub>:H Electron-Transport Films for Au/a-CN<sub>x</sub>:H/p-Si Photovoltaic Cells

Pulsed Supermagnetron Plasma CVD of a-CN<sub>x</sub>:H Electron-Transport Films for Au/a-CN<sub>x</sub>:H/p-Si Photovoltaic Cells