Influence of Coulomb blockade on electron scattering by a quantum dot has been theoretically investigated using a multielectron wave packet simulation technique based on the time-dependent Hartree–Fock approximation. In our simulation, the bound states of electrons in the dot are self-consistently determined. We confirmed that Koopman's theorem keeps its validity only for weak Coulomb interactions. Moreover, we show that the maximum number of electrons trapped in the dot does depend on the strength of Coulomb interactions. Consequently, the transmission and reflection probabilities of an incident wave packet toward the dot are strongly influenced by the number of trapped electrons in the dot.

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We have investigated semi-classical electron transport in a bland-new viewpoint of "multi-electron wave packet". Our numerical calculation shows that electrons tend to transport forming collective state with a realistic Coulomb interaction. This phenomenon may cause the intrinsic current fluctuation. Recent classical transport simulation pointed out that the speed limit of Si CMOS is around 100 GHz because of the current fluctuation that originates from the discreteness of electrons. Our results indicate that as scaling, this kind of current fluctuation becomes more serious due to the collective motion of multi-electron wave packets. In this paper, we propose that it is significant for the next generation of Si CMOS to be controlled the behavior of multi-electron wave packets from viewpoints of its structure or material.

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