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The present paper states the properties of a new ternary compound Cu4SnP10 crystallized in a f.c.c. lattice with parameter a = (10.260 ± 0.002) Å. The composition of the compound is verified by chemical, X‐ray‐phase, and micro‐structure analysis. Basic electric and optical properties of the compound are investigated.

The recombination radiation spectra of ZnSiP2 single crystals produced by different methods and doped with different impurities have been measured. The recombination radiation was excited by a high‐energy electron beam. The recombination radiation spectra of ZnSiP2 appeared to be similar to that of the wide forbidden band A3B5 phosphides. The recombination takes place at levels located in the forbidden band of this semiconductor. The investigation of the recombination radiation spectra permits us to judge of luminescent properties of ZnSiP2 crystals produced by different techniques and of their energetic spectrum. In some cases it gives a possibility to some extent to characterize the peculiarities of methods of production of this substance.