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This work reports the processing and properties of a new chalcogenide glass film that can be photo-patterned by multiphoton lithography (MPL) with enhanced post-fabrication stability. Thermally evaporated germanium-doped arsenic selenide [Ge 5 (As 2 Se 3) 95 ] thin films were photo-patterned using the output of a mode-locked titanium:sapphire laser. The morphology, chemical structure, and optical properties of the material were studied before and after photo-patterning and compared for their long-term aging behavior and stability to previously investigated arsenic trisulfide (As 2 S 3) films fabricated using similar MPL conditions. Relative to As 2 S 3 , thermally deposited Ge 5 (As 2 Se 3) 95 is found to offer higher photosensitivity and greater chemical stability after photo-patterning, as evidenced by lack of ageinduced crystallization and reduced feature degradation over a four year aging period. These findings demonstrate the suitability of a new photo-patternable material for the creation of robust, long-lived functional infrared anti-reflective coatings and meta-optics.

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