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This paper presents the room temperature performance of Si MOSFET nanowires subjected to NBTI (Negative Bias temperature Instability) and HCI (Hot Carrier Injection) stress. The static and dynamic characterizations were carried out with an enormous amount of stress adequate for a trapping / detrapping corresponding to NBTI and HCI. A simulated aging test bench has been designed to evaluate the lifetime of trapping / detrapping loads under resistive stress with an ambient temperature of 300K.

The second harmonic generation (SHG) proved to be a very promising characterization technique for dielectric-semiconductor interfaces because it is sensitive, non-destructive, can be applied directly on wafer, at different stages of wafer processing. The method, based on non-linear optics effects, is measuring a signal encompassing the "static" electric field at the dielectricsemiconductor interface which is directly related to the oxide charges Q ox and to the interface state density D it. A general methodology for Q ox and D it extraction from SHG measurements requires (i) calibration based on parameters obtained by classical electrical methods and (ii) modeling to capture the optical propagation phenomena that impact the SHG signal. In this paper, we discuss these issues based on a review of our recent advances on how to exploit SHG for dielectrics on semiconductor characterization.