Saturation Drain Current analytical modeling of Single Gate Fully Depleted SOI or SON MOSFETs in the Quasi Ballistic Regime of Transport

ANALYTICAL MODELS AND ELECTRICAL CHARACTERISATION OF ADVANCED MOSFETs IN THE QUASI BALLISTIC REGIME

“…(1), the numerical solution of the coupled Poisson and Schrodinger equations at the virtual source is required. However, it can also be achieved by suitable analytical models, such as the models derived for bulk 21 , Fully Depleted SOI 22 and double gate transistors 23 . In the subthreshold regime, this model only accounts for ideal thermionic emission in a well-designed MOSFET.…”

“…As the calculations are performed non-self consistently, this procedure does not impact the expression of r, as demonstrated in 65. Solving equations (21) and (22) leads to the following expression of the backscattering coefficient r:…”

ANALYTICAL MODELS AND ELECTRICAL CHARACTERISATION OF ADVANCED MOSFETs IN THE QUASI BALLISTIC REGIME

“…(1), the numerical solution of the coupled Poisson and Schrodinger equations at the virtual source is required. However, it can also be achieved by suitable analytical models, such as the models derived for bulk 21 , Fully Depleted SOI 22 and double gate transistors 23 .…”

“…As the calculations are performed non-self consistently, this procedure does not impact the expression of r, as demonstrated in 65. Solving equations (21) and (22) leads to the following expression of the backscattering coefficient r:…”