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We reported the non-volatile electric field-mediated magnetic properties in the half-metallic Heusler alloy Co2FeAl/Pb(Mg1/3Nb2/3)O3-PbTiO3 heterostructure at room temperature. The remanent magnetization with different applied electric field along [100] and [01-1] directions was achieved, which showed the non-volatile remanent magnetization driven by an electric field. The two giant reversible and stable remanent magnetization states were obtained by applying pulsed electric field. This can be attributed to the piezostrain effect originating from the piezoelectric substrate, which can be used for magnetoelectric-based memory devices.

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Gilbert damping in epitaxial Heusler Co 2 FeAl films with thickness varying from 3 nm to 9 nm are investigated by broadband ferromagnetic resonance (FMR) with a temperature range of 5 K-300 K. Gilbert damping shows a continuous decrease with the increasing thickness of Co 2 FeAl films. Moreover, an enhanced peak of the Gilbert damping is observed with increasing temperature up to approximately 50 K for 3 nm, 6 nm and 9 nm thick Co 2 FeAl films, which may be attributed to the spin reorientation transition at Co 2 FeAl/MgO interface. Further, we analyzed the linewidth with a superposition of a uniaxial and a fourfold anisotropy for all samples, which suggests that FMR linewidth in epitaxial Co 2 FeAl films stems from two-magnon scattering. The change of Gilbert damping is confirmed to originate from various order degrees of the B2 phase with the growth of CFA film, impacting the control of magnetic damping in spin-based nanodevices.