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We deposite silicon carbide thin layers on cleaned Si (100) substrates using the plasma enhanced chemical vapor deposition method, and show that the RFTIR spectrum is periodic in the near and medium infrared ranges. It is shown that both the deposition rate and the uniformity of the thin films are decreased by increasing the substrate temperature, and that the refractive index is increased by increasing the substrate temperature. This shows that there is a trade-off between the quality improvement of the uniformity and refractive index.

The crystal structure of InSb [111] A/B surfaces shows that this structure is polarized. This means that the surfaces of InSb [111] A and InSb [1 1 1] B contain two different crystallized directions and they have different physical and chemical properties. Experiments were carried out on the InSb [111] A/B surfaces, showing that tartaric acid etchant could create a very smooth surface on the InSb [1 1 1] B without any traces of oxides and etch pit but simultaneously create etch pit on InSb [111] A surfaces. After lapping and polishing, some particles remained on the InSb [1 1 1] B surface, they could not be removed easily by standard cleaning process and if these particles remain on the surface of the substrate, the growth layer was not uniform and some island-like regions were observed. The purpose of this work is to remove these particles on the InSb [1 1 1] B surface. Some morphology images of both surfaces, InSb [111] A/B, will be presented.

Junction depth plays an important role in determining reverse saturation current (IJ and the quantum efficiency 1] of a detector. In order to reduce the I" and increase the 1]. the thickness of p-type region is made as thin as possible. To evaluate the effect of junction depth on quantum e f ficiency and reverse saturation current we calculated the efficiency and fabricate InSb PV detector, and the effect of junction depth on performance of this type of detector acquired.

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