CdO thin films have been deposited at different concentration of SnO2 (x= (0.0, 0.05, 0.1, 0.15 and 0.2)) Wt. % onto glass substrates by pulsed laser deposition technique (PLD) using Nd-YAG laser with λ=1064nm, energy=600mJ and number of shots=500. X-ray diffraction (XRD) results reveal that the deposited (CdO)1-x(SnO2)x thin films cubic structure and the grain size increase with increasing annealing temperature and increasing concentration of SnO2. The optical transition in the (CdO)1-x(SnO2)x thin films are observed to be allowed direct transition. The value of the optical energy gap decreases with increasing of annealing temperatures and increase with increasing concentration of SnO2 for all samples.

ABSTRACT. CdO thin films have been deposited at different concentration of SnO 2 (x= (0.0, 0.05, 0.1, 0.15 and 0.2)) Wt. % onto glass substrates by pulsed laser deposition technique (PLD) using Nd-YAG laser with λ=1064nm, energy=600mJ and number of shots=500. X-ray diffraction (XRD) results reveal that the deposited (CdO) 1-x (SnO 2 ) x thin films cubic structure and the grain size increase with increasing annealing temperature and increasing concentration of SnO 2 . The optical transition in the (CdO) 1-x (SnO 2 ) x thin films are observed to be allowed direct transition. The value of the optical energy gap decreases with increasing of annealing temperatures and increase with increasing concentration of SnO 2 for all samples.

A d i e l e c t r i c a l l y i s o l a t e d s e l f -a l i g n e d s i l i c o n g a t e CMOS process designed f o r h i g h temperature operation i s d e 8 c r i bed. Component c h a r a c t e r i s t i c s o v e r t h e 25 C t o 325OC range a r e p r e s e n t e d . C i r c u i t o p e r a t i o n t o 38OoC i s demonstrated. C i r c u i t and process modifications which could extend operating temperature to about 45OoC are suggested.

TiO2 thin films have been deposited at different concentration ofCdO of (x= 0.0, 0.05, 0.1, 0.15 and 0.2) Wt. % onto glass substratesby pulsed laser deposition technique (PLD) using Nd-YAG laserwith λ=1064nm, energy=800mJ and number of shots=500. Thethickness of the film was 200nm. The films were annealed todifferent annealing (423 and 523) k. The effect of annealingtemperatures and concentration of CdO on the structural andphotoluminescence (PL) properties were investigated. X-raydiffraction (XRD) results reveals that the deposited TiO2(1-x)CdOxthin films were polycrystalline with tetragonal structure and manypeaks were appeared at (110), (101), (111) and (211) planes withpreferred orientation along 2Ɵ around 27.30. The results ofphotoluminescence (PL) emission show that there are two peakspositioned are around 320 nm and 400 nm for predominated peakand 620 nm and 680 nm for the small peaks.