Since their discovery, carbon nanotubes have fascinated many researchers due to their unprecedented properties. However, a major drawback in utilizing carbon nanotubes for practical applications is the difficulty in positioning or growing them at specific locations. Here we present a simple, rapid, non-invasive and scalable technique that enables optical imaging of carbon nanotubes. The carbon nanotube scaffold serves as a seed for nucleation and growth of small size, optically visible nanocrystals. After imaging the molecules can be removed completely, leaving the surface intact, and thus the carbon nanotube electrical and mechanical properties are preserved. The successful and robust optical imaging allowed us to develop a dedicated image processing algorithm through which we are able to demonstrate a fully automated circuit design resulting in field effect transistors and inverters. Moreover, we demonstrate that this imaging method allows not only to locate carbon nanotubes but also, as in the case of suspended ones, to study their dynamic mechanical motion.

No abstract

We demonstrate band to band tunneling (BTBT) in a carbon nanotube (CNT) field effect transistor. We employ local electrostatic doping assisted by charged traps within the oxide to produce an intramolecular PN junction along the CNT. These characteristics apply for both metallic (m-CNTs) and semiconducting (SC-CNTs) CNTs. For m-CNTs we present a hysteretic transfer characteristic which originates from local electrostatic doping in the middle segment of the CNT. This controlled doping is reversible and results in formation and destruction of a PN junction along the CNT channel. For SC-CNTs we observe BTBT, and analysis based on the WKB approximation reveals a very narrow depletion region and high transmission probability at the optimal energy bands overlap. These results may assist in developing a non-volatile one-dimensional PN junction memory cell and designing a tunneling based field effect transistor.

We describe a new metal-insulator-semiconductor (MIS) device in which cobalt based nano particles (NPs) in a core-shell structure (Co–core and Co3O4-shell) are embedded between a thermally grown SiO2 layer and a HfO2 film deposited by atomic layer deposition. Two additional structures were prepared for comparison. One had no NPs and the other included the Fe NPs, prepared using the same procedure as used for the Co film. All devices exhibited the classic behavior of a voltage variable MIS capacitor with or without a large hysteresis as in non-volatile memory (NVM) systems. However, only the device with the Co core-shell structure exhibits a negative photoconductivity (NPC) effect as well as NVM capabilities in both the capacitance-voltage (C-V) and current-voltage (I-V) characteristics. The dependence of C-V and current voltage I-V characteristics on illumination intensity and wavelength (from ultraviolet to near infrared) as well as on temperature was characterized. Illumination enhances the NPC effect as well as the flat-band voltage shift determined from C-V characteristics and hence the memory width. Illumination in the wavelength range of 735–780 nm caused a current decrease, at a given voltage, by up to a factor of two. The NPC effect stimulates an annihilation of the stored charges and therefore erases the system instantly at a small applied bias. The main cause of the NPC effect under illumination is the photo excitation of supplementary trap channels in the Co3O4 shell, which lowers the free carrier density and hence the conductivity of the MIS structure.

Reversible changes in the conductivity of HfO2 dielectric film between high and low resistive states of a metal-insulator-metal memory cell were attributed to the formation of oxygen vacancies and their clustering across the insulator layer. In this study we present an innovative model which includes generation of two-charged states of oxygen vacancies at the anode, their diffusion to the cathode, transformation to one-charged state, and then to neutral vacancies. Vacancy clusters in the insulator layer are built from only neutral vacancies, while the kinetics of the clustering process is controlled by diffusion of mobile one-charged state vacancies. Resistive switching is treated as the formation of critical size vacancy cluster which provides continuous conductive path through the dielectric layer. Good agreement between the experimental data and the theoretical bias and temperature dependences for the delay time was obtained.