The addition of active, nonlinear, and nonreciprocal functionalities to passive piezoelectric acoustic wave technologies could enable all-acoustic and therefore ultra-compact radiofrequency signal processors. Toward this goal, we present a heterogeneously integrated acoustoelectric material platform consisting of a 50 nm indium gallium arsenide epitaxial semiconductor film in direct contact with a 41° YX lithium niobate piezoelectric substrate. We then demonstrate three of the main components of an all-acoustic radiofrequency signal processor: passive delay line filters, amplifiers, and circulators. Heterogeneous integration allows for simultaneous, independent optimization of the piezoelectric-acoustic and electronic properties, leading to the highest performing surface acoustic wave amplifiers ever developed in terms of gain per unit length and DC power dissipation, as well as the first-ever demonstrated acoustoelectric circulator with an isolation of 46 dB with a pulsed DC bias. Finally, we describe how the remaining components of an all-acoustic radiofrequency signal processor are an extension of this work.

Active surface acoustic wave components have the potential to transform RF front ends by consolidating functionalities that currently occur across multiple chip technologies, leading to reduced insertion loss from converting back and forth between acoustic and electronic domains in addition to improved size and power efficiency. This letter demonstrates a significant advance in these active devices with a compact, high-gain, and low-power leaky surface acoustic wave amplifier based on the acoustoelectric effect. Devices use an acoustically thin semi-insulating InGaAs surface film on a YX lithium niobate substrate to achieve exceptionally high acoustoelectric interaction strength via an epitaxial In0.53Ga0.47As(P)/InP quaternary layer structure and wafer-scale bonding. We demonstrate 1.9 dB of gain per acoustic wavelength and power consumption of 90 mW for 30 dB of electronic gain. Despite the strong intrinsic leaky propagation loss, 5 dB of terminal gain is obtained for a semiconductor that is only 338 μm long due to state-of-the-art heterogenous integration and an improved material platform.

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The growing performance and decreasing price of embedded processors are opening many doors, for both developers in the industry and in academia. However, the complexities of these systems can create serious developmental bottlenecks. Sophisticated software packages such as OpenCV can assist in both the functional development and educational aspects of these otherwise complex applications; such tools lend themselves very well to use by the academic community, in particular in providing examples of algorithm implementation. However the task of migrating this software to embedded platforms poses its own challenges. This paper will review how to mitigate some of these issues, including C++ implementation, memory constraints, floating-point support, and opportunities to maximise performance using vendor-optimised libraries and integrated accelerators or co-processors. Finally, we will introduce a new effort by Texas Instruments to optimise vision systems by running OpenCV on the C6000 TM digital signal processor architecture. Benchmarks will show the advantage of using the DSP by comparing the performance of a DSP+ARM® system-on-chip (SoC) processor against an ARM-only device.

Piezoelectric acoustic devices that are integrated with semiconductors can leverage the acoustoelectric effect, allowing functionalities such as gain and isolation to be achieved in the acoustic domain. This could lead to performance improvements and miniaturization of radio-frequency electronic systems. However, acoustoelectric amplifiers that offer a large acoustic gain with low power consumption and noise figure at microwave frequencies in continuous operation have not yet been developed. Here we report non-reciprocal acoustoelectric amplifiers that are based on a three-layer heterostructure consisting of an indium gallium arsenide (In0.53Ga0.47As) semiconducting film, a lithium niobate (LiNbO3) piezoelectric film, and a silicon substrate. The heterostructure can continuously generate 28.0 dB of acoustic gain (4.0 dB net radio-frequency gain) for 1 GHz phonons with an acoustic noise figure of 2.8 dB, while dissipating 40.5 mW of d.c. power. We also create a device with an acoustic gain of 37.0 dB (11.3 dB net gain) at 1 GHz with 19.6 mW of d.c. power dissipation and a non-reciprocal transmission of over 55 dB.