We used the electron-beam evaporation method in various oxygen partial pressure environments to deposit TiO(2) thin films on various glass substrates at 300 degrees C. We found the threshold oxygen partial pressures above which the film is transparent are different for films on various substrates. Below the threshold oxygen partial pressure, the refractive index and the extinction coefficient of the films varied from substrate to substrate. The films on substrates with higher threshold oxygen partial pressure were associated with a higher extinction coefficient and a higher growth rate. These phenomena are correlated with the appearance of rutile phase in the anatase phase, which is also correlated with variations in the Al(2)O(3) and Na(2)O content in the substrates. The Al(2)O(3) content in the substrate tends to enhance the formation of rutile phase in the film and to give a higher extinction coefficient for the film, while the Na(2)O content in the substrate tends to retard the rutile formation in the film and to give a lower extinction coefficient for the film.

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A closed system hot filament chemical vapor deposition (CVD) reactor has been used to deposit diamond films on silicon substrates. A fixed charge of hydrogen gas is fed into the deposition system until the desired deposition pressure level is reached. A solid graphite cylindrical rod held above the tungsten filament was the carbon source. System parameters for diamond film growth have been determined. The diamond structure of the films has been verified by x-ray diffraction (XRD). Morphology typical of CVD diamond films has been observed in scanning electron microscopy (SEM). The quality of the diamond films has been evaluated by micro-Raman spectroscopy.

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