Background: In the period of the COVID-19 pandemic, the level of college students’ physical exercise, the detection rate of negative emotions, and their correlation should attract extensive attention. Therefore, this study aimed to explore the correlation between college students’ physical exercise and negative emotions. Methods: Data were collected via a web-based cross-sectional survey. A questionnaire survey was conducted among 3118 college students from five universities in Shanghai in March 2022. In addition to sociodemographic information, measures included Physical Activity Rating Scale (PARS-3) and Depression Anxiety Stress Scale (DASS). The chi-squared test and logistic regression were used to analyze the differences and test the relative risk of negative emotions caused by different amounts of physical exercise. Results: Most students (66.1%) performed a small amount of physical exercise. Male students’ physical-exercise level was higher than female students’, and the detection rate of negative emotions was lower than that of female students. Moderate and low physical-exercise levels were associated with a higher risk of depression (beta of 0.289 and 0.345, respectively) and anxiety (beta of 0.301 and 0.418) symptoms than high physical-exercise level. Conclusions: The anxiety symptoms of college students were significant during the COVID-19 pandemic period. The physical-exercise behavior of college students was closely related to negative emotions, and the weakening of physical-exercise behavior was one of the factors that induced negative emotions in college students.
Evidence shows that physical exercise promotes preschoolers’ fundamental movement skills (FMSs) and physical fitness (PF). However, studies that assess the effectiveness of different types of physical exercise interventions to improve FMSs and PF in preschool children remain scarce. To explore and compare the effectiveness of different physical exercise on FMSs and PF, interventions comprising ball games (BGs), rhythm activities (RAs), basic movements (BMs), and a combination of all related activities (multiple activities, MAs) will be conducted among preschoolers. Methods: A single-blind, five-arm, cluster-randomized trial will be conducted in kindergarten in Shanghai, China. In total, 300 healthy preschoolers, aged 4 to 5 years, will be randomized to four intervention groups (BG, RA, BM, or MA) and one control group (unorganized physical activities). Four intervention groups will receive three 30-min lessons weekly for 16 weeks. At the baseline, the end of the 16-week intervention, and the 6-month follow-up after the end of the intervention, the primary outcomes (FMSs and PF) and physical activity (PA), and sociodemographic and anthropometric data will be assessed. Discussion: This study will provide vital information regarding the effect of different physical exercise interventions on preschool children’s FMSs and PF, PA, and the potential interactions between these domains. The most effective intervention strategy can be generalized to kindergarten and other preschool educational institutions in practice to promote preschoolers’ development of FMSs and PF. Conclusions: This study protocol aims to provide a method to solve the problem of “how to arrange physical exercise and which kind of physical exercise program can promote FMS and PF better in preschool children”.
A blue emission originated from InGaN/GaN superlattice (SL) interlayer is observed in the yellow LEDs with V-pits embedded in the quantum wells (QWs), revealing that sufficient holes have penetrated through the QWs into SLs far away from the p-type layer. In the V-pits embedded LEDs, hole transport has two paths: via the flat 𝑐-plane region or via the sidewalls of V-pits. It is proved that the holes in SLs are injected from the sidewalls of V-pits, and the transportation process is significantly affected by working temperature, current density, and the size of V-pits. Four motion possibilities are discussed when the holes flow via the sidewalls. All these may contribute to a better understanding of hole transport and device design.
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