A novel diode string-triggered gated-PiN junction device, which is fabricated in a standard 65-nm complementary metal-oxide semiconductor (CMOS) technology, is proposed in this paper. An embedded gated-PiN junction structure is employed to reduce the diode string leakage current to 13 nA/µm in a temperature range from 25 • C to 85 • C. To provide the effective electrostatic discharge (ESD) protection in multi-voltage power supply, the triggering voltage of the novel device can be adjusted through redistributing parasitic resistance instead of changing the stacked diode number.

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