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Extreme ultraviolet (EUV) lithography is the first candidate for 16 nm half pitch devices and EUV pellicle is needed for mask defect control. In order to check the effect of the pellicle on the EUV patterning, aerial image simulation including the meshed pellicle is performed. We found that the overall transmission drop caused by the pellicle structure might change the line width even though the contrast of the aerial image remained almost the same. The aerial images of 16 nm line and space pattern with various pellicle structures are studied to see the effect of the meshed pellicle variables. Smaller mesh height and width, and larger mesh pitch of the pellicle support are preferred since transmission is better.

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