Influence of a wrinkle in terms of critical dimension variation caused by transmission nonuniformity and a particle defect on extreme ultraviolet pellicle

Kim, Guk-Jin; Kim, In-Seon; Lee, Sung‐Gyu; Yeung, Michael S.; Kim, Minsu; Park, Jin-Goo; Oh, Hye−Keun

doi:10.1117/1.jmm.16.4.041008

Cited by 5 publications

(2 citation statements)

References 15 publications

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“…It is generally known that particles over 10-μm size will influence the wafer pattern. 25,26 Therefore, pellicle quality should be confirmed by checking the presence of printable defects before inserting into the EUV scanner. Although particles of micrometer scale can be easily observed even by using optical microscope (OM), their printability in EUV wavelength can be hardly confirmed by nonactinic techniques.…”

Section: Image Reconstruction Methodsmentioning

confidence: 99%

Through-pellicle imaging of extreme ultraviolet mask with extreme ultraviolet ptychography microscope

Woo

Kim

Jang

et al. 2019

J. Micro/Nanolith. MEMS MOEMS

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Background: An extreme ultraviolet (EUV) pellicle is necessary to increase the process yield even though the declining throughput is a big concern. However, an EUV metrology/inspection tool for this pellicle has not been commercialized yet. Aim: The goal of this study is to verify the pellicle/mask inspection feasibility of EUV scanning lensless imaging (ESLI) and verify the impact of contaminants on pellicles depending on their size. Approach: Through-pellicle imaging was implemented by using ESLI, which uses a high-order harmonic generation EUV source and ptychography. Optical characteristics of various sizes of Fe-contaminated EUV pellicles were evaluated to verify their impact on wafer images. Results: Large size (∼10 μm) contaminants on the pellicle were found to contribute to the final wafer pattern loss. However, small size (2 to 3 μm) contaminants on the pellicle do not have substantial impact on the wafer image. Conclusions: The defect detection capability of ESLI for pellicle and mask was confirmed. Therefore, ESLI is useful in applications like pellicle qualification and EUV mask inspection metrology.

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Section: Image Reconstruction Methodsmentioning

confidence: 99%

Through-pellicle imaging of extreme ultraviolet mask with extreme ultraviolet ptychography microscope

Woo

Kim

Jang

et al. 2019

J. Micro/Nanolith. MEMS MOEMS

View full text Add to dashboard Cite

show abstract

“…The size of pellicle defects that can cause a significant CD error in the aerial image is on the order of magnitude of a few micrometers. 11,12 The raw data collected in RESCAN consist of a set of far-field diffraction patterns obtained by illuminating the sample through the pellicle and scanning the EUV reticle. A defect on the pellicle can cast a visible shadow on the diffraction pattern as it propagates through the membrane from the sample to the detector.…”

Section: Pellicle Defect Inspectionmentioning

confidence: 99%

Experimental evaluation of the impact of carbon nanotube EUV pellicles on reticle imaging

Mochi

Timmermans

Gallagher

et al. 2019

J. Micro/Nanolith. MEMS MOEMS

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Background: The purpose of EUV pellicles is to protect the surface of EUV lithography masks from particle contamination. It is important to ensure that the optical characteristics of the pellicle membrane do not critically affect the reticle image quality. Aim: We want to verify the possibility to integrate pellicle inspection and characterization capabilities in reflective-mode EUV mask scanning microscope (RESCAN), our actinic mask inspection platform based on coherent diffraction imaging. Approach: We studied the impact of a few selected EUV pellicle prototypes on the quality and the contrast of the reticle image obtained with RESCAN. Results: We measured the scattering distribution of the pellicles, and we correlated it with the mask image contrast and fidelity. We also detected the presence of a 6.5-μm-diameter fiber on the pellicle surface. Conclusions: We demonstrated that RESCAN is suitable for through-pellicle actinic mask inspection and can be also used to characterize and monitor the pellicle quality.

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Experimental evaluation of the impact of EUV pellicles on reticle imaging

Mochi

Timmermans

Gallagher

et al. 2018

Photomask Technology 2018

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The purpose of EUV pellicles is to protect the surface of EUV lithography masks from particle contamination. Currently several pellicle prototypes are being developed. It is important to ensure that the optical characteristics of the pellicle membrane do not critically affect the reticle image quality. We present here a study of the impact of a few selected EUV pellicle prototypes on the quality and the contrast of the reticle image obtained with an actinic lensless microscope.

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Influence of a wrinkle in terms of critical dimension variation caused by transmission nonuniformity and a particle defect on extreme ultraviolet pellicle

Cited by 5 publications

References 15 publications

Through-pellicle imaging of extreme ultraviolet mask with extreme ultraviolet ptychography microscope

Through-pellicle imaging of extreme ultraviolet mask with extreme ultraviolet ptychography microscope

Experimental evaluation of the impact of carbon nanotube EUV pellicles on reticle imaging

Experimental evaluation of the impact of EUV pellicles on reticle imaging

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