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Quantum teleportation transfers unknown quantum states from one node in a quantum network to another. It is one of the crucial architectures in quantum information processing. The teleportation of high-dimensional quantum states remains challenging due to the difficulties in executing high-dimensional Bell state measurement. Here, we propose a Quantum Autoencoder-Facilitated Teleportation (QAFT) protocol for high-dimensional quantum teleportation, and report the first demonstration of QAFT on qutrits using an integrated photonic platform for future scalability. The key strategy is to reduce the dimension of the input states by erasing redundant information and reconstruct its initial state after chip-to-chip teleportation. Machine learning is applied in training the autoencoder to facilitate the teleportation of any state from a particular high-dimensional subspace and achieve the reconstruction of the unknown state (by the decoder) with high fidelities (~ 0.971). Experimentally, we teleport unknown qutrits by generating, transferring and manipulating photons, and training quantum autoencoders on a silicon chip. A teleportation fidelity of ~ 0.894 is demonstrated. Our scheme opens pathway towards quantum internet and cryptography to transfer unmeasured states in a quantum computer. It also lays the groundwork for machine learning technologies in quantum networks and quantum computations.

We report a p-type nickel oxide/n-type indium gallium zinc oxide (p-NiO/n-IGZO) thin film heterojunction structure for resistive switching memory application. The as-fabricated structure exhibits the normal p-n junction behaviors with good rectification characteristic. The structure is turned into a bipolar resistive switching memory by a forming process in which the p-n junction is reversely biased. The device shows good memory performances; and it has the capability of multibit storage, which can be realized by controlling the compliance current or reset stop voltage during the switching operation. The mechanisms for both the forming process and bipolar resistive switching are discussed; and the current conduction at the low- and high-resistance states are examined in terms of temperature dependence of the current-voltage characteristic of the structure.

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