Electronics with multifunctionalities such as transparency, portability, and flexibility are anticipated for future circuitry development. Flexible memory is one of the indispensable elements in a hybrid electronic integrated circuit as the information storage device. Herein, we demonstrate a transparent, flexible, and transferable hexagonal boron nitride (hBN)-based resistive switching memory with indium tin oxide (ITO) and graphene electrodes on soft polydimethylsiloxane (PDMS) substrate. The ITO/hBN/graphene/PDMS memory device not only exhibits excellent performance in terms of optical transmittance (∼85% in the visible wavelength), ON/OFF ratio (∼480), retention time (∼5 × 10 s) but also shows robust flexibility under bending conditions and stable operation on arbitrary substrates. More importantly, direct observation of indium filaments in an ITO/hBN/graphene device is found via ex situ transmission electron microscopy, which provides critical insight on the complex resistive switching mechanisms.

The ability to selectively scatter green light is essential for an RGB transparent projection display, and this can be achieved by a silver-core, titania-shell nanostructure (Ag@TiO), based on the metallic nanoparticle's localized surface plasmon resonance. The ability to selectively scatter green light is shown in a theoretical design, in which structural optimization is included, and is then experimentally verified by characterization of a transparent film produced by dispersing such nanoparticles in a polymer matrix. A visual assessesment indicates that a high-quality green image can be clearly displayed on the transparent film. For completeness, a theoretical design for selective scattering of red light based on Ag@TiO is also shown.

Transparent resistive switching random access memory (ReRAM) is of interest for the future integrated invisible circuitry. However, poor understanding of its working mechanism in transparent ReRAMs with the indium tin oxide (ITO) electrode is still a critical problem and will hinder its widespread applications. To reveal the actual working mechanism in transparent ReRAMs with the ITO electrode, we investigate the transparent ITO/SiO x /ITO memory devices (∼82% transmittance in the visible region) and compare it with ITO/SiO x /Au memory devices, which both can exhibit reproducible bipolar switching. The indium (In) filament evolution, which accounts for the bipolar switching behaviors in the ITO/SiO x /ITO (or Au) memories, is directly observed using transmission electron microscopy on samples with different memory states (electroformed, ON, and OFF). These studies uncover the microscopic mechanism behind the bipolar switching in SiO x -based ReRAM devices with the ITO electrode, providing a general guidance for the design of high-performance ReRAMs with large scalability and high endurance.

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We report a p-type nickel oxide/n-type indium gallium zinc oxide (p-NiO/n-IGZO) thin film heterojunction structure for resistive switching memory application. The as-fabricated structure exhibits the normal p-n junction behaviors with good rectification characteristic. The structure is turned into a bipolar resistive switching memory by a forming process in which the p-n junction is reversely biased. The device shows good memory performances; and it has the capability of multibit storage, which can be realized by controlling the compliance current or reset stop voltage during the switching operation. The mechanisms for both the forming process and bipolar resistive switching are discussed; and the current conduction at the low- and high-resistance states are examined in terms of temperature dependence of the current-voltage characteristic of the structure.