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Aim:To evaluate the effect of three polishing protocols that could be implemented at recall on the surface roughness of two direct esthetic restorative materials.Materials and Methods:Specimens (n = 40) measuring 8 mm (length) × 5 mm (width) × 4 mm (height) were fabricated in an acrylic mold using two light-cured resin-based materials (microfilled composite and microhybrid composite). After photopolymerization, all specimens were finished and polished with one of three polishing protocols (Enhance, One Gloss, and Sof-Lex polishing systems). The average surface roughness of each treated specimen was determined using 3D optical profilometer. Next all specimens were brushed 60,000 times with nylon bristles at 7200 rpm using crosshead brushing device with equal parts of toothpaste and water used as abrasive medium. The surface roughness of each specimen was measured after brushing followed by repolishing with one of three polishing protocols, and then, the final surface roughness values were determined.Results:The data were analyzed using one-way and two-factor analysis of variance (ANOVA) and Tukey's honestly significant difference (HSD). Significant difference (P < 0.05) in surface roughness was observed. Simulated brushing following initial polishing procedure significantly roughened the surface of restorative material (P < 0.05).Conclusion:Polishing protocols can be used to restore a smooth surface on esthetic restorative materials following simulated tooth brushing.

The surface passivation performance of atomic layer deposited ultra-thin aluminium oxide layers with different thickness in the tunnel layer regime, i.e., ranging from one atomic cycle (∼0.13 nm) to 11 atomic cycles (∼1.5 nm) on n-type silicon wafers is studied. The effect of thickness and thermal activation on passivation performance is investigated with corona-voltage metrology to measure the interface defect density Dit(E) and the total interface charge Qtot. Furthermore, the bonding configuration variation of the AlOx films under various post-deposition thermal activation conditions is analyzed by Fourier transform infrared spectroscopy. Additionally, poly(3,4-ethylenedioxythiophene) poly(styrene sulfonate) is used as capping layer on ultra-thin AlOx tunneling layers to further reduce the surface recombination current density to values as low as 42 fA/cm2. This work is a useful reference for using ultra-thin ALD AlOx layers as tunnel layers in order to form hole selective passivated contacts for silicon solar cells.

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