We report on the enhanced electro-optic coefficient of GaInAsP three-step quantum wells ͑3SQW͒ for high power electrorefraction modulator applications. Measured electro-optic coefficient of the 3SQW is nearly three times higher than the conventional rectangular quantum well ͑RQW͒ at ϭ1.55 m. The enhanced electro-optic effect, combined with a low optical absorption coefficient ␣Ͻ1 cm Ϫ1 in the 3SQW increases a modulator figure of merit by nearly 36 times, and decreases the power consumption by nearly one order of magnitude compared with a conventional RQW design.

Highly linear and efficient phase modulators based on three-step quantum wells are reported. The spatial separation of electron and hole wave functions in the three-step quantum well leads to enhancement of the linear electro-optic component. In parallel, the quadratic electro-optic component is suppressed using a method based on tailored doping profile. Measured modulation efficiency is 48°/mm V, and the ratio of linear to quadratic components of the phase modulation is 640 at = 1560 nm. The efficiency is similar to the best reported values for semiconductor modulators at this wavelength, while the linearity is more than one order of magnitude higher.

Absorption cross section and signal enhancement in Er-doped Si nanocluster rib-loaded waveguides

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