This study demonstrates etch profile engineering of InP, In1−xGaxAs1−yPy, and In0.53Ga0.47As heterostructures results from adding H2 to standard Cl2/Ar inductively coupled plasma-reactive ion etching chemistries. Etch rate curves of bulk InP, In1−xGaxAs1−yPy, and In0.53Ga0.47As show a general parabolic trend as a function of the H2 component of the Cl2/Ar/H2 ratio. Three distinct etching profiles of InP/InGaAsP layers were realized by varying the Cl2/Ar/H2 ratio. Highly anisotropic profiles result for Cl2/Ar/H2 ratios between 2/3/1 and 2/3/2. Waveguiding structures fabricated using this technology are presented with a loss as low as 2 dB/cm. An InP racetrack resonator with a quality factor (Q)>8000 is also presented.

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The dependence of the wet oxidation process on the AlAs layer thickness used in selectively oxidized vertical-cavity surface-emitting-laser structures is studied in detail. A theoretical model based on a diffusion-reaction process is proposed. A rapid reduction in the oxidation rate is predicted with a reduction in the layer thickness of the ultrathin AlAs layer. The theoretical predictions are verified through experiments.

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