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A low-power wordline voltage generating system is developed for low-voltage flash memories. The limit for the stand-by current including the operation current for the band-gap reference and the stand-by wordline voltage generator is discussed. The system was implemented on a 1.8-V 32-Mb flash memory fabricated with a 0.25-m flash memory process and achieved with very low stand-by current of 2 A typically, and high operating frequency of 25 MHz in read operation at 1.8 V. A low-voltage level shifter with high-speed switching is also proposed.

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