International audienceAccurate system level simulation is indispensable for efficient RF communication system design. However system level models of nonlinear circuits are today very limited by their inability to handle nonlinear memory effects. The paper describes a new approach of system-level modeling which accounts efficiently for nonlinear envelope memory effects of wideband amplifiers, multipliers and mixers
A very high efficient, low distortion C-band MMlC Amplifier using a linear and non-linear models of the PHEMT devices has been developed. Double stage MMlC amplifier fabricated with 2x3.6mm gate width PHEMT and rZxl2mm gate width PHEMT exhibits an output power of 39 dBm at 2dB of gain compression, a linear gain of 27dB and an associated PAE of 42% in the frequency range of 3.5-4.4GHz. These excellent results are performed by developing an exact non-linear model of the PHEMT device and optimizing the matching network of the amplifier.
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