An improved behavioral modeling technique for high power amplifiers with memory

This article performs an analysis of current limitations regarding the extraction of parallel behavioral models to reproduce the power amplifier (PA) nonlinear behavior and its dynamics. To overcome these limitations, a general preprocessing block that clearly improves the identification capabilities shown by classical parallel structures is proposed. It follows the principle of separating both static and dynamic nonlinear behavior of the PA to obtain a better identification performance. A comparison with common parallel configurations using linear estimation is performed, to highlight the benefits of using the preprocessing structure. Furthermore, a new nonlinear parallel structure using sub-band filtering techniques is also proposed. For the models extraction and comparison, four types of noise-free simulated data presenting different levels of nonlinearities and memory, as well as a measured signal obtained from a laboratory amplifier have been considered.

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“…These memories are mixed together in the PA (nonlinear coupled), and the problem of estimating behavioral models becomes very difficult [15].…”

Section: Estimating Memory Effects With Sub-band Structuresmentioning

confidence: 99%

Improvements and analysis of nonlinear parallel behavioral models

Silveira

Gilabert

Lavrador

et al. 2009

Int J RF and Microwave Comp Aid Eng

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“…In addition, SSPA behavioral models based on direct Volterra series expansion and digital filter representation adopted in [4], [5] , and [6] often lead to complex model architecture and optimization procedure. Combination of first order modified Volterraseries expansions reported in [7], [8] enable a relatively straightforward extraction methodology with a good prediction of memory effects (short and long term).…”

Section: Introductionmentioning

confidence: 99%

A new Multi-Harmonic Volterra model dedicated to GaN packaged transistor or SSPA for pulse application

Demenitroux¹,

Mazière²,

Gatard³

et al. 2011

2011 IEEE MTT-S International Microwave Symposium

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This paper presents a new macro modeling methodology for solid-state amplifiers (SSAs) and packaged transistors used in radar systems. The model topology is based on the principle of the harmonic superposition recently introduced by the Agilent X-parameters (TM) combined with dynamic Volterra theory. In this work, we focus on a pulsed identification method which has been made from time domain load pull measurement performed on a packaged transistor. The model has been validated by pulsed RF measurement in the optimum area for several frequencies.

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“…To accurately model a PA, we have to take into account both nonlinearities and memory effects. Several works have recently been published proposing behavioral models and extraction procedures for envelope behavioral model simulation [1][2][3][4]. The Volterra series has been used by several researchers to describe the relationship between the input and the output of a power amplifier with memory effects [1].…”

Section: Introductionmentioning

confidence: 99%

A Novel Black Box Based Behavioral Model of Power Amplifier for WCDMA Applications

Sappal¹,

Patterh²,

Sharma³

2010

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In this paper, Black Box approach is presented for behavioral modeling of a non linear power amplifier with memory effects. Large signal parameters of a Motorola LDMOS power amplifier driven by a WCDMA signal were extracted while taking into considerations the power amplifier's bandwidth. The proposed model was validated based on the simulated data. Some validation results are presented both in the time and frequency domains, using WCDMA signal.

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An improved behavioral modeling technique for high power amplifiers with memory

Abstract: International audienceAn improved behavioral modeling technique for high power amplifiers with memor

Cited by 34 publications

References 7 publications

Improvements and analysis of nonlinear parallel behavioral models

Improvements and analysis of nonlinear parallel behavioral models

A new Multi-Harmonic Volterra model dedicated to GaN packaged transistor or SSPA for pulse application

A Novel Black Box Based Behavioral Model of Power Amplifier for WCDMA Applications

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