The development of high performance flexible electronics requires dielectrics possessing a high dielectric constant and enhanced mechanical stability. In this study, we report on novel polymer nanocomposite dielectrics based on n-octadecylphosphonic acid (ODPA) functionalized aluminum titanate (AT) nanoparticles as dopants in poly(4-vinylphenol) (PVP). The robust surface layer covering the nanoparticles induces improved dielectric properties of the resulting composite films due to better interfacial adhesion. The nanocomposite layer with tunable dielectric permittivity and low leakage current is highly compatible on flexible substrates and has been deposited via a simple solution process. The air-stable p-type and n-type transistors fabricated on the composite dielectric layer exhibited superior electrical performance than those on the pristine polymer dielectric layer. The complementary inverters made from these transistors possessed a large signal gain and sharp switching. We systematically studied the electrical performance of the capacitors, transistors and inverters under different applied strains on flexible substrates. From the flexibility test, all these devices were found to be mechanically stable and environmentally robust, demonstrating that the composite dielectric layer is an excellent candidate for the future development of conformable sensors, portable displays and other flexible electronic applications.

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A b s t r a c t Thermally stable dual work function metal gates are demonstrated using a conventional CMOS process flow. The gate structure consists of poly-Siimetal nitrides (MNJ SiON (or highk)iSi slack with atomic layer deposition (ALD)-TaN, for thc NFET and ALD-WN, for the PFET. Much enhanced dnve current (Id) and transconductance (G,) values, and reduced off current (Ion) characteristics were attained with ALD-MN, gated devices over control poly-Si and PVD-MN, devices within controllable V, shifts. Excellent scalability of dual work function MN,ihigh-k gate stack was demonstrated the EOT was down to 6.68, with low leakage in a low thermal budget device scheme. IntroductionWith aggressive scaling of CMOS devices, it is imperative to replace poly-Si gates by metal gates to eliminate poly-depletion. The most desired metal gates should possess work functions close to Si band edges for CMOSFETs. More importantly, these metal gates should be thermally stable to employ a conventional process flow for fabrication; however, it is extremely challenging to identify two thermally stable metal gates with the correct work functions [1,2]. Furthermore, lhe method of preparing the metal gates is critical due

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We present results on mid-gap metal gated MOSFETs using CoSi 2 & W with Si oxide & oxynitride gate dielectrics. For CoSi 2 gates, we demonstrate a simple integration scheme using silicidation of the polysilicon (poly) gate with low nFET Tinv~1.7nm. For the W gate stack, we use a replacement gate process resulting in a pFET Tinv~1.8 nm. W pFET mobility is comparable to poly, while nFET peak mobility is degraded.