State-of-the-art process-strained Si (PSS) technology featuring single-NiSi Schottky source/drain (S/D) and ultra-thin gate oxide of 1.2 nm is demonstrated for L gate down to 39 nm. +10% performance boost of Schottky-Barrier (SB)-PSS NMOS, as compared to its non-Schottky counterpart, is demonstrated due to series resistance reduction of the silicide S/D and enhanced strain effects. Highest SB-PSS PMOS drive current of 821 µA/µm (at V D = −1.2V and I off =100 nA/µm) is recorded when integrated with recessed Si 1-x Ge x S/D stressor.

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