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A porous Ta/T~Oh/MnO2 capacitor is described. This capacitor, which might be termed a solid electrolytic capacitor, provides a higher capacitance per unit of volume than can be obtained with any other capacitor heretofore available. Its small size makes it extremely attractive for use in transistor circuits and in other low voltage circuits requiring the ultimate in miniaturization. Construction, characteristics, and advantages of the new electronic device are discussed.

An electrochemical theory is proposed for rectification, as exemplified by the tantalum (or aluminum) electrolytic rectifier and capacitor. A detailed consideration of the mechanism of formation of the oxide film which constitutes the rectification barrier leads to the conclusion that this barrier consists of an electrolytic polarization, in the form of a concentration gradient of excess metal ions, permanently fixed or “frozen” in position in an otherwise insulating matrix of electrolytically‐formed oxide. The physical structure which has been described functions as (a) a current‐blocking ionic space charge or (b) a current‐passing electronic semiconductor, depending solely upon the direction of the applied voltage. The movement of electrons only is required. An explanation for breakdown of the barrier at excessively high voltages is suggested. This explanation may be applicable to dielectric breakdown of other kinds.

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