After a systematic analysis of different databases and a comparison with empirical data, we decided to describe photoelectric absorption coefficients, coherent and incoherent scattering coefficients and mass attenuation coefficients in the energy range from 1 to 300 keV for elements from Z = 1 to 94 by a modified version of Scofield's tables in combination with scattering coefficients from Elam et al.
Modifications include check and correction of edge positions, description of M 4 -and M 5 -ranges of elements from promethium upwards by sawtooth responses and reduction of data by introduction of least-squares fits of fifth order to Scofield's and Elam et al.'s numerical data. Our database was developed especially for application in fundamental parameter programs for quantitative x-ray analysis (XRFA, EPMA, XPS and TEY).We start by looking at the classical McMaster tables. 2 Elements from Z D 1 to 83 and elements Z D 86, 90, 92 and 94 are contained and photon energies cover the range from 1 keV to 1 MeV. Essential data are conversion from b/a to cm 2 g 1 , K-and L-edge positions and corresponding jumps, third-order least-squares fit coefficients of photoelectric absorption in K-, second-order fit coefficients in L-and
It is shown that calculations of electron attenuation lengths and escape depths would require modification of definitions proposed in the literature, since these definitions are not universally applicable. Exemplary experimental arrangements are indicated for which more general definitions are necessary, and such definitions are proposed. A Monte Carlo program has been developed with which it is possible to estimate attenuation lengths and escape depths. A comparison of these parameters is made for photoelectrons arising from s levels.
An efficient method for quantitative XPS analysis is the so-called multiline approach. This method does not require standards, it takes into account the instrumental and matrix effects and it derives quantitative information from statistical analysis of all photoelectron intensities visible in the spectra. One can expect the reliability of this approach to be better than the reliability of methods involving uncorrected relative sensitivity factors. This paper summarizes recent improvements in the multiline approach. In particular, a new expression for the universal energy dependence of the inelastic mean free path is currently used. Furthermore, the statistical analysis has been modified in order to account properly for the error in the countrates. Finally, a database with physical constants has been added (photoionization cross-sections, asymmetry parameters, binding energies, etc.) to avoid errors of polynomial approximations. The modified algorithm of the multiline approach was applied to photoelectron intensities measured for AuCu alloys in four laboratories. Surfaces of these alloys were sputtered with 2 keV Ar' ions, because at this energy the selective sputtering effects are expected to be negliible. Very consistent results were obtained. The average deviation from the hulk surface composition was found to be equal to k3.2 at.%. Extensive software implementing the described version of the multiline approach is presently being developed.
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