Data on semiconductor laser amplifiers with a small tensile strain in the wells of multiple quantum well structures are presented. Semiconductor amplifiers with a small strain of 0.2% exhibit polarization insensitive characteristics with a signal gain of 15 dB in the 1.5 μm wavelength range. The enhancement of TM mode gain due to tensile strain is studied by measuring the dependence of amplified spontaneous emission spectra on device length and tensile strain.

Good quality InP was successfully grown on (100)GaAs 2° off normal toward [011] substrates by introducing low-temperature grown GaAs/InP double buffer layers. It was found that addition of a thin GaAs buffer layer (20 nm thick) grown at low temperature (430 °C) between the GaAs substrate and an InP buffer layer was effective for improving the crystal quality. The full width at half-maximum of the x-ray rocking curve was as narrow as 200 arcsec for a 6-μm-thick InP layer. An electron mobility of 15 000 cm2/(V s) at 77 K was obtained for an unintentionally doped layer. The intensity of the photoluminescence at 77 K was as good as that for an InP substrate.

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