Heteroepitaxial growth of InP on a GaAs substrate by low-pressure metalorganic vapor phase epitaxy

Abstract

Good quality InP was successfully grown on (100)GaAs 2° off normal toward [011] substrates by introducing low-temperature grown GaAs/InP double buffer layers. It was found that addition of a thin GaAs buffer layer (20 nm thick) grown at low temperature (430 °C) between the GaAs substrate and an InP buffer layer was effective for improving the crystal quality. The full width at half-maximum of the x-ray rocking curve was as narrow as 200 arcsec for a 6-μm-thick InP layer. An electron mobility of 15 000 cm2/(V s) at 77 K was obtained for an unintentionally doped layer. The intensity of the photoluminescence at 77 K was as good as that for an InP substrate.

Characterization of InGaAs/InP single quantum well structure on GaAs substrate with metamorphic buffer grown by molecular beam epitaxy

“…This observation is consistent with the XRD FWHM study by Hirokawa et al [16], where the buffer layer scheme involved a LT GaAs buffer and a two-step InP growth by MOVPE. The optimized growth temperature for their InP buffer layer was 550 C compared to the value of 400 C used in this investigation.…”

“…However, there are a few reports on the growth of InP on GaAs by metal organic vapor phase epitaxy (MOVPE) and chloride vapor phase epitaxy [16][17][18]. According to Hirokawa et al [16], the buffer layer scheme including a low-temperature (LT) GaAs buffer and a two-step InP growth is found to provide smoother surface morphology and better crystalline quality. In this paper, we report on the growth and characterization of metamorphic InP layers grown on GaAs substrate using solid source molecular beam epitaxy (SSMBE).…”

Microstructural improvements of InP on GaAs (001) grown by molecular beam epitaxy by in situ hydrogenation and postgrowth annealing

“…In early work, mirrorlike InP surfaces were obtained by metal-organic chemical-vapor deposition ͑MOCVD͒. 10 Growth on sawtooth patterned GaAs substrates demonstrated the reduction in threading dislocations ͑TDs͒ because the sawtooth-shaped interfaces increase the probability of TD interactions and self-annihilations. 11 An improved two-step growth method was also demonstrated in which the V/III ratio was lowered for the growth of an initial low-temperature layer at 400°C.…”

Влияние конструкции метаморфного буферного слоя на сохраняемость параметров метаморфного транзистора InGaAs/GaAs с высокой подвижностью электронов

“…Технология метаморфного буфера (ММБ) в настоящий момент широко применяется для эпитаксиального выращивания транзисторных гетероструктур [1]. Первые работы по использованию ММБ относятся к концу 80-х годов XX века [2,3]. Идея ММБ состоит в плавном или резком (ступенчатом) переходе от постоянной решетки одного слоя (чаще всего подложки) к постоянной решетки, необходимой для роста слоев активной области.…”

“…Во всех образцах ММБ выращивался при пониженной температуре подложки (643 K). Осаждение буферного слоя при низкой температуре подложки (≤ 673 K) способствует релаксации кристаллической решетки и препятствует переходу к трехмерному режиму роста в процессе молекулярно-пучковой эпитаксии [2,3].…”