Microstructural improvements of InP on GaAs (001) grown by molecular beam epitaxy by in situ hydrogenation and postgrowth annealing

Abstract

Articles you may be interested inGrowth of InP on GaAs (001) by hydrogen-assisted low-temperature solid-source molecular beam epitaxy

Compositionally-graded InGaAs–InGaP alloys and GaAsSb alloys for metamorphic InP on GaAs

“…Morales et al [7] also showed direct growth of InP on on-axis GaAs (0 0 1) via molecular beam epitaxy (MBE) with a resulting threading dislocation density of 10 8 cm À 2 . These results are not surprising as direct growth of highly lattice-mismatched systems InP on GaAs, or GaAs on Si leads to large strains (4 3.5%) at the mismatched interface, which result in the nucleation of large quantities of dislocations.…”

“…Summary of threading dislocation density results for films up to InP lattice constant on GaAs substrate in the literature and this work[6][7][8][9]12].…”

Dislocation reduction of InAs nanofins prepared on Si substrate using metal-organic vapor-phase epitaxy

“…Misfit segments can lie along the $\left(1\bar{1}0\right)$ direction in the (001) growth plane, while threading segments rise up on the {111} plane in the same direction [6,25]. Threading dislocations on the {111} plane are a result of the planes' lower facet surface energy [13,14]. Threading dislocations make a 45° angle with the underlying Si (001) substrate.…”

Nanoepitaxy of GaAs on a Si(001) substrate using a round-hole nanopatterned SiO2mask

“…Threading segments originate from the GaAs/Si interface and rise to the {111} plane, making an angle with the fundamental Si(001) substrate [6,18]. Stacking faults and twins easily form on the preferred {111} plane due to it having the lowest surface facet energy and the largest plane spacing [19,20]. During the GaAs epitaxial growth procedure, some stacking faults for GaAs on Si multiply or self-annihilate.…”