A 600 V normally-ON GaN high-electron mobility transistor (HEMT) technology with an intrinsic specific ON resistance R on · A = 500 mΩ·mm2 and a breakdown voltage of BV dss ∼ 1100 V is described. A novel high-power 30-A-class GaN-Si MOSFET cascode device with a back-side source Si laterally diffused MOSFET (LDMOSFET) and an embedded clamp diode are employed to enable the GaN HEMT to withstand 400 V and a more than 5 µs load short circuit condition, as required in switching inverter applications. Considerations for improvement of the GaN lateral HEMT short-circuit withstand capability are addressed.

A 600V normally-ON GaN HEMT technology, featuring an intrinsic RonxA=500mΩ.mm 2 at BVdss~1100V, is described. A novel high-power 30A GaN-Si MOSFET Cascode, with Si-LDMOS back-side source and embedded clamp diode is implemented. For the first time, a 30A-class GaN Cascode is able to withstand 400V, >5µsec load-short circuit condition, as required in switching inverter applications.