Robust 600 V GaN high electron mobility transistor technology on GaN-on-Si with 400 V, 5 µs load-short-circuit withstand capability

Abstract

A 600 V normally-ON GaN high-electron mobility transistor (HEMT) technology with an intrinsic specific ON resistance R on · A = 500 mΩ·mm2 and a breakdown voltage of BV dss ∼ 1100 V is described. A novel high-power 30-A-class GaN-Si MOSFET cascode device with a back-side source Si laterally diffused MOSFET (LDMOSFET) and an embedded clamp diode are employed to enable the GaN HEMT to withstand 400 V and a more than 5 µs load short circuit condition, as required in switching inverter applications. Considerations for improvement of the GaN lateral HEMT short-circuit withstand capability are addressed.

2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current

“…With floating substrate, the V BR at 1 lA/mm was À1450 V and À2000 V, and the hard breakdown was À1500 V and À2500 V for devices with L AC of 15 lm and 25lm, respectively, corresponding to a critical breakdown field of 1 MV/cm (extracted from the hard breakdown voltage versus L AC ). With grounded substrate, the V BR at 1 lA/mm for both L AC was about À1060 V, while the hard breakdown was up to À1200 V, which is comparable to current 650 V-rated GaNon-Si power transistors [18][19][20][21] and is limited by the vertical breakdown of the buffer layers. 22 These results indicate that the 15 lm-L AC SBDs can fulfill the voltage-blocking requirements of 600/650 V applications, even for those requiring grounded substrate connection, and the 25 lm-L AC SBDs can be used for 1200 V applications (with floating substrate connection 22 ) both providing a safety margin in breakdown of about 100% (from the rated voltage to the hard breakdown).…”

Investigation of AlGaN/GaN HEMTs degradation with gate pulse stressing at cryogenic temperature

“…1-4 Recently GaN-onSi substrate attracts a lot of attention due to its low cost towards mass production. [5][6][7] Despite the good materials and heterojunction properties, there are still several reliability issues that hinder the commercialization of a GaN power device. 8 Among these issues, the traps in gate dielectric layer or at the dielectric/AlGaN interface may be the critical element that contributes to device performance and reliability.…”

Trap behaviours characterization of AlGaN/GaN high electron mobility transistors by room-temperature transient capacitance measurement

“…[1][2][3] Recently GaNon-Si substrate attracts a lot of attention due to its low cost towards mass production. [4][5][6] It is also noted that the high-K dielectric application in AlGaN/GaN HEMTs have also been actively studied, like the high-K application in the field of thin film transistors. 7,8 However, the reliability of AlGaN/GaN HEMTs is still of a great concern.…”