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Using nitrogen radio-frequency (RF) plasma operated in low-pressure metal-organic chemical vapor deposition (LP-MOCVD), nitrogen-doped ZnSe epilayers were grown and their optical properties were investigated. In the low-temperature photoluminescence (PL) of nitrogen-doped ZnSe epilayers, two emissions were observed, attributed to a nitrogen acceptor-bound exciton (I 1 ) at 2.792 eV and a donor-acceptor pair (DAP) at 2.70 eV. The characteristics of nitrogen acceptorbound excitons and DAP emissions under excitation power dependent PL spectra were discussed. From theses results, we found that nitrogen was successfully incorporated into selenium sites and then acted as an acceptor. In addition, we obtained the net acceptor concentration 1.15 Â 10 18 cm --3 by capacitance-voltage profiling.