Al was deposited on the both sides of p-type Si by the sputtering, and the pulsed KrF excimer laser was irradiated on the one side and both sides of Al dot contacts. Due to the thin-high doping recrystallized layer, the transitions from the Schottky diodes to the ohmic contacts via backward diodes were observed in I-V measurement. Good Nshape negative resistances and notches were observed in the diodes, and ohmic contacts. Possible interpretations of the orgin of these phenomena are discussed. And, the simple model of the effective barrier height reduction under the thermionic field emission was developed using WKB approximation, and tunneling theory. By the depth Auger analysis, Al, and Si profiles near Al-Si interface after the laser irradiation were observed.

The heterojunction diode of amorphous SiC-pSi with barrier contacts in which the interface layer, a-SiC, is much less than 100 nm and contains considerable defect densities, exhibited bistable switching with memory. Either state was maintained over weeks without bias. A high-impedance state switched to a low-impedance state with the transient on-state when a threshold voltage was exceeded. After application of current pulses, a low-impedance switched to a high-impedance state. In C-V Measurement, novel negative capacitance phenomenon in the entire bias range which has not been reported yet was demonstrated. Experimental results show that this negative capacitance is due to the inductive reactance. This phenomenon presents the possibility of replacing inductor even at zero bias.