Al was deposited on the both sides of p-type Si by the sputtering, and the pulsed KrF excimer laser was irradiated on the one side and both sides of Al dot contacts. Due to the thin-high doping recrystallized layer, the transitions from the Schottky diodes to the ohmic contacts via backward diodes were observed in I-V measurement. Good Nshape negative resistances and notches were observed in the diodes, and ohmic contacts. Possible interpretations of the orgin of these phenomena are discussed. And, the simple model of the effective barrier height reduction under the thermionic field emission was developed using WKB approximation, and tunneling theory. By the depth Auger analysis, Al, and Si profiles near Al-Si interface after the laser irradiation were observed.

No abstract

No abstract

These properties enhance the possibility of Mn2+-doped zinc gallate being used as a cathodoluminescent phosphor.