The magnetotransport properties of a two-dimensional electron gas were studied at low temperatures in an inverted GaAs-AlGaAs heterostructure whose electron density could be changed between 0.8 × 10 11 and 2.4 × 10 11 cm −2 by the application of a substrate bias. The epitaxial layers were grown undoped to reduce the influence of remote ionized impurity scattering and so a biased back-gate was needed to create the two-dimensional electron gas. The conductive back-gate required the use of a shallow Pd/AuGe/Ag/Au contact recipe. We present the magnetoresistance response for a range of back-gate biases (electron densities) and compare the mobilities, the transport scattering and the single-particle relaxation times with theory.

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