We conducted a cohort study to investigate the effects of coffee and green tea consumption on all-cause mortality in a rural Japanese population. Data were obtained from 2,855 men and women aged 40-79 years in 1989, and during the subsequent 9.9 years of follow-up. Using the Cox regression model to adjust for potential confounding factors, we calculated the multivariate hazard ratios of death from all causes separately for men and women. The multivariate hazard ratio of mortality for men who consumed two or more cups of coffee per day, compared with those who consumed less than half a cup per day, was 0.43 (95% confidence interval, 0.30-0.63), and the ratio for those who consumed half to one cup of coffee per day was 0.70 (95% confidence interval, 0.52-0.94). Exclusion of subjects with less than 5 years of follow-up did not substantially change the findings. No other statistically significant associations were identified between consumption of the two beverages and all-cause mortality. For men, multivariate hazard ratios of death from apoplexy showed a significant inverse association with increasing coffee consumption.The effects of habitual coffee consumption and its related factors on health in Japan need to be studied in greater detail.

In this work, submicron-size (down to 0.273 μm2) spin–dependent tunnel junctions with resistance as low as ∼30 Ω μm2 have been fabricated, where the tunneling barrier of AlOx was formed by in situ natural oxidation. These junctions annealed at 250 °C for 5 h showed tunneling magnetoresistance (TMR) of 14.3% and 25.8% for the pinned layers of CoFe/RuRhMn and CoFe/PtMn, respectively, while the TMR is further increased to 31.6% for a synthetic antiferromagnetic pinned layer of CoFe/Ru/CoFe/PtMn due to less interdiffusion at CoFe/Ru interface. The investigation has indicated that the growth of ultrathin Al layer is very sensitive to the surface roughness of bottom ferromagnetic electrode, and large surface roughness leads to small junction resistance.

Characterization and isolation of a large population of cells are indispensable procedures in biological sciences. Flow cytometry is one of the standards that offers a method to characterize and isolate cells at high throughput. When performing flow cytometry, cells are molecularly stained with fluorescent labels to adopt biomolecular specificity which is essential for characterizing cells. However, molecular staining is costly and its chemical toxicity can cause side effects to the cells which becomes a critical issue when the cells are used downstream as medical products or for further analysis. Here, we introduce a high-throughput stain-free flow cytometry called in silico-labeled ghost cytometry which characterizes and sorts cells using machine-predicted labels. Instead of detecting molecular stains, we use machine learning to derive the molecular labels from compressive data obtained with diffractive and scattering imaging methods. By directly using the compressive ‘imaging’ data, our system can accurately assign the designated label to each cell in real time and perform sorting based on this judgment. With this method, we were able to distinguish different cell states, cell types derived from human induced pluripotent stem (iPS) cells, and subtypes of peripheral white blood cells using only stain-free modalities. Our method will find applications in cell manufacturing for regenerative medicine as well as in cell-based medical diagnostic assays in which fluorescence labeling of the cells is undesirable.

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In this work, the dielectric breakdown in magnetic tunnel junctions ͑MTJs͒ was studied. The MTJ structure is Ta50/NiFe100/Co20/AlOx/Co30/RuRhMn100/Ta50 with the bottom lead of Ta50/ Cu500/Ta50 and the top lead of Cu2000/Ta50 ͑in Å͒, where the tunneling barrier was formed by 2-20 min radical oxygen oxidation of a 10 Å-thick Al layer. The junctions with area from 2ϫ2 to 20ϫ20 m 2 were patterned using the photolithography process, leading to tunneling magnetoresistance up to 17.2% and resistance-area product ranging from 350 ⍀ m 2 to 200 k⍀ m 2 . The junctions studied show dc breakdown voltage from 0.7 to 1.3 V, depending on the junction area and the oxidation time. Long oxidation time up to 14 min and a small junction area results in a large dc breakdown voltage. The electrostatic discharge ͑ESD͒ of MTJs was tested by using a human body model. The ESD breakdown voltage increases with decreasing junction resistance. These results are discussed in terms of the E-model based on the field-induced distortion of atomic bonds in the oxide barrier.